首页> 外国专利> GAS SENSOR MEMBER USING COMPOSITE OF HOLLOW SPHERE STRUCTURED METAL OXIDE SEMICONDUCTOR FILM AND GRAPHENE, AND MANUFACTURING METHOD THEREOF

GAS SENSOR MEMBER USING COMPOSITE OF HOLLOW SPHERE STRUCTURED METAL OXIDE SEMICONDUCTOR FILM AND GRAPHENE, AND MANUFACTURING METHOD THEREOF

机译:空心球状结构的金属氧化物膜与石墨烯的复合气体传感器及其制造方法

摘要

The present invention relates to a gas sensor member and a method for manufacturing the same and, specifically, to a gas sensor member comprising a hollow structure metal oxide semiconductor film and graphene and a method for manufacturing the same. Disclosed is the gas sensor member comprising at least one hollow structure metal oxide semiconductor film, and a graphene layer attached to the hollow structure metal oxide semiconductor film. According to the present invention, the gas sensor member is formed by using a complex of a hollow structure metal oxide semiconductor film and a graphene layer attached to the same. Therefore, disclosed are the gas sensor member having high sensitivity properties to detect a trace amount of gas, faster reaction rate and recovery rate, mechanical stability to endure an external physical stress, and selectivity to detect various gases; and the method for manufacturing the same.
机译:气体传感器构件及其制造方法技术领域本发明涉及一种气体传感器构件及其制造方法,尤其涉及包括中空结构的金属氧化物半导体膜和石墨烯的气体传感器构件及其制造方法。公开了一种气体传感器构件,其包括至少一个中空结构的金属氧化物半导体膜和附接到中空结构的金属氧化物半导体膜的石墨烯层。根据本发明,通过使用中空结构的金属氧化物半导体膜和附接到其上的石墨烯层的复合物来形成气体传感器构件。因此,公开了一种气体传感器构件,其具有高的灵敏度特性以检测痕量的气体,更快的反应速率和回收率,承受外部物理应力的机械稳定性以及检测各种气体的选择性。及其制造方法。

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