METHOD FOR OPTIMIZING ANGULAR VELOCITY OF CRUCIBLE TO GROW HIGH QUALITY SILICON SINGLE CRYSTAL AND EXTEND LIFE OF CRUCIBLE

摘要

With regard to a crystal growth method for growing single crystal silicon into an ingot by soaking a single crystal seed in a crucible containing a polysilicon melt and rotating the crucible at 8-10 rpm, the present invention can reduce the concentration of oxygen dissolved between the inner wall of the crucible and the melt, thereby controlling the concentration of oxygen which flows into the single crystal silicon. According to the present invention, the concentration of oxygen which flows into the ingot is reduced, thereby allowing the growth of a high quality single crystal and particularly preventing bubble expansion from the inner wall of the crucible.;COPYRIGHT KIPO 2015