首页> 外国专利> FOUR-ELECTRODE STRUCTURE WITH FINE PATTERN BASED ON SEMICONDUCTOR FABRICATION TECHNOLOGY

FOUR-ELECTRODE STRUCTURE WITH FINE PATTERN BASED ON SEMICONDUCTOR FABRICATION TECHNOLOGY

机译:基于半导体制造技术的精细图形四电极结构

摘要

The present invention relates to a four-electrode structure with fine pattern for electric filed loading application which: is used for a vacuum electronic device; is easy to fabricate at lower cost; satisfies high process precision; and ensures a stable feature control in an electromagnetic wave process through a stabilized silicon photocrystalline lattice.;COPYRIGHT KIPO 2015
机译:本发明涉及一种用于电场加载应用的具有精细图案的四电极结构,其用于真空电子设备。易于以较低的成本制造;满足高加工精度;并通过稳定的硅光晶格确保电磁波过程中稳定的特征控制。; COPYRIGHT KIPO 2015

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