Hydrogen permeation barrier layer and hydrogen storage device comprising the same

摘要

The present invention relates to a hydrogen permeation barrier layer having a hydrogen repulsion layer of n/p/n or p/n/p structures wherein an n-type semiconductor and a p-type semiconductor are multi-joined, and to a hydrogen storage device comprising the same. The present invention can prevent hydrogen leakage and cavitation damage by more effectively repulsing hydrogen permeating an inner wall of a hydrogen storage container than an existing hydrogen repulsion layer having an n/p or p/n single junction structure where only one depleted layer exists as the applied voltage increases; and two depleted layers are expanded on the inside of the hydrogen repulsion layer regardless of the polarity of the applied voltage from the outside. Also, the hydrogen repulsion layer having n/p/n or p/n/p multi junction structures of the present invention has strong resistance against static electricity and electric overload. Accordingly, the life span and stability of the hydrogen storage container can be improved.