Power semiconductor device, an electronic power module and method for machining of a power semiconductor device

摘要

A power semiconductor device (400) according to various embodiments may include: a semiconductor body (401); and a passivation layer (402), by means of at least a portion of the semiconductor body (401) is arranged, wherein the passivation layer (402) an organic dielectric material which contains a water absorption of less than or equal to 0,5 w -% in saturation.