首页> 外国专利> A device for generation of the plasma with reduction of the overvoltage across the terminals of the switching transistor, and the corresponding control

A device for generation of the plasma with reduction of the overvoltage across the terminals of the switching transistor, and the corresponding control

机译:一种用于减少开关晶体管端子两端的过电压的等离子体产生装置以及相应的控制

摘要

The plasma generation device comprises a glow plug comprising a plasma generation of the inductive, capacitive resonator (rs2) able to produce a high voltage generation means (mgn) configured so as to deliver successive series of control pulses to a control frequency, and a voltage generator (geni) comprising a switching transistor (m1), whose control electrode is connected to the output of the means for generating and an output able to deliver a pulse train of the voltage at the resonator in response to the control pulse train received on the control electrode of the switching transistor. On the final part (ifp) of each train (tr), the generation means are configured so as to deliver the control pulses to a control frequency different from the resonant frequency of the resonator.
机译:等离子体产生装置包括电热塞,该电热塞包括电感性电容性谐振器(rs2)的等离子体产生,该电感性电容性谐振器能够产生高电压产生装置(mgn),该高电压产生装置被配置为将一系列连续的控制脉冲传递至控制频率。发生器(geni),其包括开关晶体管(m1),其控制电极连接到用于产生的装置的输出,以及能够响应于在所述谐振器上接收到的控制脉冲串而在谐振器处传递电压的脉冲串的输出。开关晶体管的控制电极。在每个序列(tr)的最后部分(ifp)上,生成装置被配置为将控制脉冲传递到与谐振器的谐振频率不同的控制频率。

著录项

  • 公开/公告号FR3001601B1

    专利类型

  • 公开/公告日2015-02-13

    原文格式PDF

  • 申请/专利权人 RENAULT S.A.S;

    申请/专利号FR20130050725

  • 发明设计人 ANDRE AGNERAY;

    申请日2013-01-29

  • 分类号H05H1/24;H01T13/40;H03K17/08;

  • 国家 FR

  • 入库时间 2022-08-21 14:54:25

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号