The present invention provides a method for manufacturing a multilayer varistor device (100). The method according to the invention comprises providing a substrate (1) for a multilayer varistor device (100) comprising a plurality of internal electrodes (3). The method according to the invention further comprises the step of providing the substrate (1) with a starting material for one copper electrode layer (4), which starting material is directly bonded to at least one internal electrode (3). In addition, in order to form the copper electrode layer (4), a step of heat-treating the starting material in a protective gas atmosphere is provided. The present invention further provides a multilayer varistor device (100). [Selection] Figure 1
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