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Eu DOPED SrI2 SINGLE CRYSTAL AND RADIATION DETECTOR

机译:Eu掺杂SrI2单晶和辐射探测器

摘要

PROBLEM TO BE SOLVED: To provide: an Eu doped SrIsingle crystal capable of reducing broad luminescence derived from defects in the vicinity of 550 nm in order to solve the problem that a conventional Eu doped SrIsingle crystal has strong luminescence derived from Eu and having a sharp peak in the vicinity of 430 nm and has broad luminescence derived from defects in the vicinity of 550 nm, and an intensity ratio of the luminescence in the vicinity of 550 nm to the luminescence in the vicinity of 430 nm is 5% or more; and a radiation detector including a scintillator formed with the Eu doped SrIsingle crystal.SOLUTION: The Eu doped SrIsingle crystal has 3% or less of an intensity ratio of luminescence derived from defects in the vicinity of 550 nm to luminescence derived from Eu in the vicinity of 430 nm in a fluorescence spectrum excited by ultraviolet light having a wavelength of 193 nm. The radiation detector includes a scintillator formed with the Eu dope SrIsingle crystal.SELECTED DRAWING: Figure 3
机译:解决的问题:提供:能够减少源自550nm附近的缺陷的宽发光的Eu掺杂的SsIsingle晶体,以解决常规的Eu掺杂的SsIsingle晶体具有源自Eu的强发光并且具有尖锐的尖锐的问题。峰值在430nm附近,并且具有由550nm附近的缺陷引起的宽泛的发光,并且550nm附近的发光与430nm附近的发光的强度比为5%以上。解决方案:掺Eu的SsIsingle晶体具有550%附近的缺陷所致的发光强度与附近Eu的发光所致的发光强度比的3%以下。波长为193 nm的紫外光激发的荧光光谱中的430 nm波长。辐射探测器包括一个由Eu掺杂SrIsingle晶体形成的闪烁体。图3

著录项

  • 公开/公告号JP2016056030A

    专利类型

  • 公开/公告日2016-04-21

    原文格式PDF

  • 申请/专利权人 UNION MATERIAL KK;

    申请/专利号JP20140180945

  • 发明设计人 SAKURAGI SHIRO;

    申请日2014-09-05

  • 分类号C30B29/12;C09K11/61;C09K11/00;G01T1/20;

  • 国家 JP

  • 入库时间 2022-08-21 14:45:30

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