Preparation method of thermoelectric compounds based on new standard of self-propagating combustion synthesis

摘要

The present invention relates to a new standard for self-propagating combustion synthesis of binary compounds, and the maximum temperature Tad at which the system reaches the adiabatic condition with the amount of heat released during combustion synthesis is higher than the melting point TmL of the low melting point composition in the system. For example, self-propagating combustion synthesis can occur. The standard removes the limitations of the traditional self-propagating combustion synthesis standard Tad 1800K, and the new standard is not only applied to thermoelectric compound semiconductor materials, but also high temperature ceramic materials such as high temperature alloys, metal carbides, metal borides, etc. It can also be applied to intermetallic compounds and has wide versatility. [Selection] Figure 3