An insulating outer portion, production of located in the outer portion and Guo and isolated conductive region from Gaikaku part, in configured TSV interconnect structure

摘要

PROBLEM TO BE SOLVED: To provide a method of producing an interconnection structure.;SOLUTION: The method for producing the interconnection structure includes the formation in a substrate (100) of at least one trench (103, 105) forming a closed contour and at least one hole (102, 104) situated inside the closed contour, the trench and the hole being separated by a zone of the substrate, and the method also includes steps for filling the trench with a dielectric material (111) and the hole with a conducting material (117, 122).;COPYRIGHT: (C)2011,JPO&INPIT