PROCESSES FOR USING FLUX AGENTS TO FORM POLYCRYSTALLINE GROUP III-GROUP V COMPOUNDS FROM SINGLE SOURCE ORGANOMETALLIC PRECURSORS

摘要

The present invention provides methods for using single source organometallic precursors in the fabrication of polycrystalline Group III-Group V compounds, preferably semiconductor compounds. The present invention teaches how to select organometallic ligands in single-source precursors in order to control the stoichiometry of the corresponding Group III-Group V compounds derived from these precursors. The present invention further teaches how to anneal precursors in the presence of one or more flux agents in order to increase the crystalline grain size of polycrystalline Group III-Group V compounds derived from organometallic precursors. This helps to provide Group III-Group V semiconductors with better electronic properties. The flux layer also helps to control the stoichiometry of the Group III-Group V compounds.