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SEMICONDUCTOR DEVICE, MEASUREMENT APPARATUS, AND MEASUREMENT METHOD OF RELATIVE PERMITTIVITY
SEMICONDUCTOR DEVICE, MEASUREMENT APPARATUS, AND MEASUREMENT METHOD OF RELATIVE PERMITTIVITY
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机译:半导体装置,测量装置以及相对介电常数的测量方法
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摘要
The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor including an oxide semiconductor layer and physical properties of the oxide semiconductor layer has not been clear yet. Thus, a first object is to improve electric characteristics of the transistor by control of physical properties of the oxide semiconductor layer. A semiconductor device including at least a gate electrode, an oxide semiconductor layer, and a gate insulating layer sandwiched between the gate electrode and the oxide semiconductor layer, where the oxide semiconductor layer has the relative permittivity of equal to or higher than 13 (or equal to or higher than 14), is provided.
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