首页> 外国专利> Nanostructured Organic Memristor/Memcapacitor Of Making With An Embedded Low-To-High Frequency Switch And A Method Of Inducing An Electromagnetic Field Thereto

Nanostructured Organic Memristor/Memcapacitor Of Making With An Embedded Low-To-High Frequency Switch And A Method Of Inducing An Electromagnetic Field Thereto

机译:嵌入式低频至高频开关制造的纳米结构有机忆阻器/半导体电容器及其感应电磁场的方法

摘要

An organic memresitor/memcapacitor comprises of two terminal electrodes, each electrode has a membrane made of nanostructure organic conducting polymer of cyclodextrin derivatives attached thereto. By self assembling of cross-linking copolymers forming conductive membranes and separated by a mobile dopant barrier dielectric material, one side of the membrane has structure formed flat horizontal nano-bridges with array larger vertical nanopores underneath the bridge; and another side of the electrode/membrane has a negative mobile dopant polymer network forming arrays nano-islands with the membrane thickness is one third of the opposite membrane to be feasible conducting “head-tail” biphase charge and discharge at wide range of frequencies, so called the low-to-high frequency switch embedded to effectively save energy and storage energy by utilizing functional groups mimicking the positive and negative isopotential poles active sites of the acetylcholinesterase (ACHE) gorge along strengthened by a hydrophobic reagent. This invention also disclosed a method to build an organic Memristor/Memcapacitor having no hydrophobic reagent applied to lining the ACHE gorge and hence it induced an electromagnetic field that was not able to have biphase charge/discharge in an organic media.
机译:有机膜电阻器/电容器包括两个端电极,每个电极具有膜,该膜由附着于其上的环糊精衍生物的纳米结构有机导电聚合物制成。通过自组装形成导电膜并被可移动的掺杂物阻挡层介电材料隔开的交联共聚物,膜的一侧形成了结构平坦的水平纳米桥,该纳米桥在桥下具有较大的垂直纳米孔阵列。电极/膜的另一侧具有负移动掺杂剂聚合物网络,形成纳米岛阵列,其膜厚度为相对膜的三分之一,以便在宽频率范围内进行“头尾”双相充放电,所谓的低频到高频开关是嵌入的,通过利用模仿乙酰胆碱酯酶(ACHE)的正负等电位极活性位点的官能团沿着疏水性试剂增强的功能来有效地节省能量和存储能量。本发明还公开了一种构建没有将疏水试剂施加到ACHE峡谷衬里的有机忆阻器/忆阻器的方法,因此,它诱导了在有机介质中不能具有双相充电/放电的电磁场。

著录项

  • 公开/公告号US2016155972A1

    专利类型

  • 公开/公告日2016-06-02

    原文格式PDF

  • 申请/专利权人 ELLEN TUANYING CHEN;

    申请/专利号US201514919606

  • 发明设计人 ELLEN TUANYING CHEN;

    申请日2015-10-21

  • 分类号H01L51/05;H01L51/00;H01L27/28;

  • 国家 US

  • 入库时间 2022-08-21 14:34:31

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