首页> 外国专利> NANOSTRUCTURED COPPER-SELENIDE WITH HIGH THERMOELECTRIC FIGURE-OF-MERIT AND PROCESS FOR THE PREPARATION THEREOF

NANOSTRUCTURED COPPER-SELENIDE WITH HIGH THERMOELECTRIC FIGURE-OF-MERIT AND PROCESS FOR THE PREPARATION THEREOF

机译:具有高热电品质因数的纳米结构硒化铜及其制备方法

摘要

Disclosed is a nanostructured p-type copper-selenide as a cost-effective thermoelectric material with a high thermoelectric figure-of-merit. The nanostructured copper-selenide is a cost-effective p-type thermoelectric material having a high figure-of-merit of 2 at 973 K and is synthesized employing high energy ball milling process followed by reaction sintering under pressure at high heating rates using spark plasma sintering of the resulting nanopowders. The sintered copper-selenide shows a density of 99.9% of theoretical density and retains the nanoscale features introduced during ball milling leading to a thermoelectric figure of merit of 2 at 973 K.
机译:公开了一种纳米结构的p型硒化铜,作为具有高热电品质因数的成本有效的热电材料。纳米硒化铜是一种具有成本效益的p型热电材料,在973 K时具有2的高品质因数,它是采用高能球磨工艺合成的,然后在高压下使用火花等离子体在压力下进行反应烧结烧结所得的纳米粉。硒化铜烧结后的密度为理论密度的99.9%,并保留了球磨过程中引入的纳米级特征,从而在973 K时的热电品质因数为2。

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