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Halbach Array and Magnetic Suspension Damper Using Same

机译:Halbach阵列和使用其的磁悬浮阻尼器

摘要

A Halbach magnetic array is disclosed, including a plurality of first and second magnetic units alternately arranged in a width direction, wherein: each first magnetic unit includes first magnetic groups and first magnetic columns alternately arranged in a length direction, each first magnetic group includes four first magnetic bars arranged in a 2*2 matrix; each second magnetic unit includes second magnetic groups and second magnetic columns alternately arranged in the length direction, each second magnetic group includes four second magnetic bars arranged in a 2*2 matrix; each first magnetic column is magnetized in a height direction, and each second magnetic column is magnetized in a direction opposite to the height direction. A magnetic suspension vibration damper is also disclosed which includes Halbach magnetic arrays as described above that are stacked together along a height direction to produce a magnetic force in the height direction and performs the vibration damping function by means of magnetic attractive forces or magnetic repulsive forces. As a Halbach array has a magnetic density on one side that is √{square root over (2)} times of a traditional N-S array, the damper can achieve a higher load-bearing capacity at the same magnetic energy product and produce a magnetic field on one side with characteristics allowing optimized utilization of magnetic energy product. In addition, the damper can also significantly alleviate the issue of magnetic leakage associated with the use of N-S arrays.
机译:公开了一种哈尔巴赫磁性阵列,其包括在宽度方向上交替布置的多个第一和第二磁性单元,其中:每个第一磁性单元包括第一磁性组和在长度方向交替地布置的第一磁柱,每个第一磁性组包括四个以2×2矩阵布置的第一磁条;每个第二磁性单元包括在长度方向上交替排列的第二磁性组和第二磁性柱,每个第二磁性组包括以2×2矩阵排列的四个第二磁性条。每个第一磁柱在高度方向上被磁化,并且每个第二磁柱在与高度方向相反的方向上被磁化。还公开了一种磁悬浮减振器,其包括如上所述的沿高度方向堆叠在一起以在高度方向上产生磁力的哈尔巴赫磁阵列,并通过磁吸引力或磁排斥力来执行减振功能。由于Halbach阵列的一侧的磁密度是传统NS阵列的√{2的平方根}倍,因此该阻尼器可以在相同的磁能积下实现更高的承载能力并产生磁场一方面具有可以优化利用磁能积的特性。另外,阻尼器还可以大大减轻与使用N-S阵列相关的漏磁问题。

著录项

  • 公开/公告号US2016197544A1

    专利类型

  • 公开/公告日2016-07-07

    原文格式PDF

  • 申请/专利权人 SHANGHAI MICRO ELECTRONICS EQUIPMENT CO.LTD.;

    申请/专利号US201414910994

  • 发明设计人 LIWEI WU;

    申请日2014-08-06

  • 分类号H02K49/10;H01F7/02;

  • 国家 US

  • 入库时间 2022-08-21 14:32:34

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