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Solvent for reducing resist consumption and method using solvent for reducing resist consumption

机译:减少抗蚀剂消耗的溶剂和使用该溶剂减少抗蚀剂消耗的方法

摘要

The present disclosure provides a solvent for reducing resist consumption, which includes a first solvent selected from the group consisting of alkylene glycol alkyl ether acetate, alkylene glycol alkyl ether and a combination thereof, and a second solvent having a hydrogen bonding Hansen parameter lower than 5.34 and an evaporation rate (n-BuAc=1) lower than 0.6. A volume ratio of the first solvent to the second solvent is in a range of 0/100 to 90/10. A resist dispense volume for a 300 mm wafer is less than 0.6 cc, or a resist dispense volume for a 450 mm wafer is less than 1.1 cc.
机译:本公开提供了一种用于减少抗蚀剂消耗的溶剂,其包括选自由亚烷基二醇烷基醚乙酸酯,亚烷基二醇烷基醚及其组合组成的组的第一溶剂,以及氢键汉森参数低于5.34的第二溶剂。蒸发速度(n-BuAc = 1)低于0.6。第一溶剂与第二溶剂的体积比在0/100至90/10的范围内。 300毫米晶圆的抗蚀剂分配体积小于0.6 cc,或者450毫米晶圆的抗蚀剂分配体积小于1.1 cc。

著录项

  • 公开/公告号US9482957B1

    专利类型

  • 公开/公告日2016-11-01

    原文格式PDF

  • 申请/专利权人 I-SHAN KE;

    申请/专利号US201514738946

  • 发明设计人 YU-HSUN LIN;

    申请日2015-06-15

  • 分类号G03F7/40;C11D11/00;G03F7/42;B05D1/00;H01L21/02;G03F7/16;C11D3/20;C11D3/22;

  • 国家 US

  • 入库时间 2022-08-21 14:32:08

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