首页> 外国专利> COMPLEMENTARY RESISTANCE SWITCH, CONTACT-CONNECTED POLYCRYSTALLINE PIEZO- OR FERROELECTRIC THIN-FILM LAYER, METHOD FOR ENCRYPTING A BIT SEQUENCE

COMPLEMENTARY RESISTANCE SWITCH, CONTACT-CONNECTED POLYCRYSTALLINE PIEZO- OR FERROELECTRIC THIN-FILM LAYER, METHOD FOR ENCRYPTING A BIT SEQUENCE

机译:互补电阻开关,接触连接的多晶压电或铁电薄膜层,用于加密位序列的方法

摘要

Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11′, 11″) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
机译:公开了一种包括两个外部触点的互补电阻开关( 3 ),两个外部触点之间有两个压电或铁电层( 11 a 11 b )位于内部具有公共触点。修改层的至少一个区域( 11',11 ''),或者外部触点为整流(S),内部触点为非整流( 0 ),反之亦然,修饰区形成在整流触点处,层具有不同的应变相关结构相,具有不同的带隙和/或不同的极化电荷,并且层的电导率不同。还公开了在两个相邻的压电或铁电层上具有至少一个肖特基接触的可连接电阻器结构,包括改性微晶的多晶压电或铁电层以及用于加密和解密位序列的方法和电路。

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