High capacitance density gate dielectrics for III-V semiconductor channels using a pre-disposition surface treatment involving plasma and TI precursor exposure

摘要

A method of depositing a uniform dielectric thin film is provided that includes pre-cleaning a substrate surface, using a deposition apparatus, by exposing the substrate to a plasma, where the plasma can include a nitrogen plasma, a hydrogen plasma, an ammonia plasma, or a plasma containing nitrogen-hydrogen radicals in a plasma chamber of the deposition apparatus, where the substrate comprises a semiconductor of type III-V, and exposing the pre-cleaned substrate surface, using the deposition apparatus, to alternating cycles of the plasma, using the plasma chamber, and pulses of a precursor containing Ti, using a deposition chamber of the deposition apparatus, where less than 10% TiN or Ti—O—N bonding is present on said substrate surface, where a uniform substantially TiO₂ dielectric thin film is formed on said substrate.