首页> 外国专利> Positive and negative magnetostriction ultrahigh linear density sensor

Positive and negative magnetostriction ultrahigh linear density sensor

机译:正负磁致伸缩超高线性密度传感器

摘要

A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.
机译:数据传感器可以配置有布置在第一和第二磁屏蔽之间的磁堆叠。磁性叠层可以具有设置在分别经由第一电极叠层和第二电极叠层耦合到第一磁屏蔽层和第一磁屏蔽层的第一和第二无磁性叠层之间的非磁性间隔层。第一无磁叠片可具有由过渡金属材料构成的第一子层,并且该第一子层设置在由负磁致伸缩材料构成的第二子层与由正磁致伸缩材料构成的第三子层之间。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号