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Non-linear element, display device including non-linear element, and electronic device including display device

机译:非线性元件,包括非线性元件的显示装置以及包括显示装置的电子装置

摘要

A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χφmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
机译:提供了一种非线性元件,例如二极管,其中使用了氧化物半导体并且整流性能良好。在包括氢浓度小于或等于5×10 19 / cm 3 的氧化物半导体的薄膜晶体管中,源电极的功函数φms在与氧化物半导体接触时,与氧化物半导体接触的漏电极的功函数φmd和氧化物半导体的电子亲和力χ满足φms≤χ<φmd。通过将薄膜晶体管的栅电极和漏电极电连接,可以实现整流特性更加良好的非线性元件。

著录项

  • 公开/公告号US9385114B2

    专利类型

  • 公开/公告日2016-07-05

    原文格式PDF

  • 申请/专利权人 SEMICONDUCTOR ENERGY LABORATORY CO. LTD.;

    申请/专利号US201414337297

  • 发明设计人 SHUNPEI YAMAZAKI;DAISUKE KAWAE;

    申请日2014-07-22

  • 分类号H01L27/02;H01L27/12;H01L29/786;H01L29/861;H02H9/04;

  • 国家 US

  • 入库时间 2022-08-21 14:28:23

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