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Electronic circuit with a reverse-conducting IGBT and gate driver circuit

机译:具有反向导通IGBT和栅极驱动器电路的电子电路

摘要

An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.
机译:电子电路包括反向导通的IGBT和驱动器电路。反向导通IGBT在第一关态栅极电压下的第一二极管发射极效率不同于在第二关断态栅极电压下的第二二极管发射极效率。驱动器电路的驱动器端子电连接至反向导通IGBT的栅极端子。在第一状态下,驱动器电路在驱动器端子处提供导通状态栅极电压。在第二状态中,驱动器电路提供第一截止状态栅极电压,而在第三状态中,驱动器电路在驱动器端子处提供第二截止状态栅极电压。可以以不同的模式来操作反向导通的IGBT,例如可以降低总损耗。

著录项

  • 公开/公告号US9337827B2

    专利类型

  • 公开/公告日2016-05-10

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号US201313941797

  • 发明设计人 DOROTHEA WERBER;

    申请日2013-07-15

  • 分类号H03K3;H03K17/567;H01L29/739;H01L29/06;H01L29/08;

  • 国家 US

  • 入库时间 2022-08-21 14:28:07

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