METHOD FOR THE SELECTIVE OBTENTION OF SILICON OXYNITRIDES (SI2N2O) AND/OR SILICON NITRIDES (SI3N4).

摘要

The present invention refers to a method for producing silicon oxynitrides and/or silicon nitride in a selective manner, where said composites are obtained with a high purity, either in powder, reinforcements and/or coatings by using fluorinated solid precursors of silicon (X2SiF6). In the present process the reactant chemical species (SiF3, SiF2, SiF and Si) are generated on purpose and in-situ within a reaction chamber for the selective formation of Si2N2O and/or silicon nitride. The inventive method allows the generation of the reactant species, the formation of Si2N2O and/or silicon nitride and the deposit of said composites to be carried out in the same place and in-situ, thus using the intrinsic thermal gradients of the reaction chamber. Besides the energy saving resulting from the thermal gradients, the method of the invention allows the processing time and temperature to be reduced, also facilitating the formation of nitrides since the reactant species are dissociated, thereby promoting the selective formation of silicon oxynitrides (Si2N2O) and/or silicon nitride.