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METHOD FOR PRODUCING HIGH-PURITY LANTHANUM,HIGH-PURITY LANTHANUM,SPUTTERING TARGET FORMED FROM HIGH-PURITY LANTHANUM,AND METAL GATE FILM HAVING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
METHOD FOR PRODUCING HIGH-PURITY LANTHANUM,HIGH-PURITY LANTHANUM,SPUTTERING TARGET FORMED FROM HIGH-PURITY LANTHANUM,AND METAL GATE FILM HAVING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
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机译:高纯镧,高纯镧的制造方法,以高纯镧为靶的溅射靶以及以高纯镧为主要成分的金属栅膜的制造方法
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摘要
The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700°C to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.
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