首页> 外国专利> Nano- and micro-structuring of silicon with laser using a laser-induced plasma for the treatment of the laser beam of processing (Machine-translation by Google Translate, not legally binding)

Nano- and micro-structuring of silicon with laser using a laser-induced plasma for the treatment of the laser beam of processing (Machine-translation by Google Translate, not legally binding)

机译:使用激光诱导的等离子体用激光对硅进行纳米和微结构化处理,以处理加工的激光束(通过Google Translate进行机器翻译,无法律约束力)

摘要

Nano- and micro-structuring of silicon with laser using a laser-induced plasma for processing the laser beam. The method object of the invention is characterized in that it comprises an ablation stage, in which a first pulsed laser ablation beam is incised, with a fluence in the range 10-100 jcm-2, on the surface of a metallic sample generating a laser-induced plasma; and a processing step, in which a second pulsed, processing laser beam is incised, with a creep of 0.3 jcm-2, retarded with respect to the ablation laser beam, between 0.1 and 1 microsecond, on a silicon surface next to the laser-induced plasma so that said second laser beam crosses said plasma perpendicularly with respect to the axis of expansion of the plasma. (Machine-translation by Google Translate, not legally binding)
机译:硅的纳米和微结构化,使用激光诱导的等离子体处理激光束。本发明的方法目的的特征在于,其包括烧蚀台,在该烧蚀台中,在产生激光的金属样品的表面上切割出第一脉冲激光烧蚀束,其通量在10-100jcm-2的范围内。诱发血浆以及处理步骤,其中在紧挨着激光的硅表面上切出第二个脉冲处理激光束,该激光束的蠕变相对于烧蚀激光束为0.3 jcm-2,相对于烧蚀激光束延迟了0.1到1微秒。感应等离子体,使得所述第二激光束相对于等离子体的膨胀轴垂直穿过所述等离子体。 (通过Google翻译进行机器翻译,没有法律约束力)

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