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CREATION OF HYPERDOPED SEMICONDUCTORS WITH CONCURRENT HIGH CRYSTALLINITY AND HIGH SUB-BANDGAP ABSORPTANCE USING NANOSECOND LASER ANNEALING
CREATION OF HYPERDOPED SEMICONDUCTORS WITH CONCURRENT HIGH CRYSTALLINITY AND HIGH SUB-BANDGAP ABSORPTANCE USING NANOSECOND LASER ANNEALING
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机译:使用纳米激光退火技术创建具有高结晶度和高亚带隙吸收率的高掺杂半导体
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摘要
In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.
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