首页> 外国专利> HALL SENSOR AND COMPENSATION METHOD FOR OFFSET CAUSED BY TEMPERATURE DISTRIBUTION IN HALL SENSOR

HALL SENSOR AND COMPENSATION METHOD FOR OFFSET CAUSED BY TEMPERATURE DISTRIBUTION IN HALL SENSOR

机译:霍尔传感器和霍尔传感器中温度分布引起的偏移的补偿方法

摘要

The present invention relates to a Hall sensor in which a Hall element and elements serving as heat sources out of components of an operation circuit for the Hall element are arranged close to each other on a silicon substrate. According to the present invention, two directions of control currents by spinning current for the Hall element are selected in a vector manner based on signals from temperature sensors to be arranged adjacent to a periphery of the Hall element, thereby enabling the elimination of a magnetic offset caused by heat generation of the heat sources. The Hall sensor comprises: a semiconductor substrate; the hall element; two pairs of terminals; the element; and the temperature sensors.
机译:霍尔传感器技术领域本发明涉及一种霍尔传感器,其中,在硅基板上将霍尔元件和作为霍尔元件的运算电路的构成要素中的热源的元件彼此接近地配置。根据本发明,通过基于来自温度传感器的信号以向量方式选择通过旋转霍尔元件的电流的两个方向的控制电流的方向,所述信号被布置为邻近霍尔元件的外围,从而能够消除磁偏移。由热源的热量产生。霍尔传感器包括:半导体衬底;和大厅元素;两对端子;元素和温度传感器。

著录项

  • 公开/公告号KR20160064000A

    专利类型

  • 公开/公告日2016-06-07

    原文格式PDF

  • 申请/专利权人 SII SEMICONDUCTOR CORPORATION;

    申请/专利号KR20150164740

  • 发明设计人 HIOKA TAKAAKI;AKINO MASARU;

    申请日2015-11-24

  • 分类号G01R33/07;G01R33;G01R33/09;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:19

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