PSEUDO RANDOM AND COMMAND DRIVEN BIT COMPENSATION FOR THE CYCLING EFFECTS IN FLASH MEMORY AND METHODS THEREFOR

摘要

randomized be readily implemented in a flash EEPROM memory is reduced due to the repeated and long-term storage of specific data patterns, NAND string resistive, program disturb, read disturb the user, and between the floating gate coupling. Randomization in different embodiments, or a doctor (pseudo) randomized to generate code that can be driven by a random file user. Command, which is driven by the user but can be predicted the timing thereof, can be used to trigger and to achieve a high level of randomization. It is to randomly change the encoding method of the data to prevent the repetitive and prolonged storage of certain data patterns. The user stores the same information for a long period, or even repeated wish to save it, will be randomly encoded together with other encoding schemes, therefore, data patterns will be varied. ; Flash EEPROM memory, concealment area, the user data area, the flash memory array, a plurality of bit registers, peripheral circuits, multiple-bit code, the encoding scheme