COPPER INTERCONNECT DEVICE INCLUDING SURFACE FUNCTIONALIZED GRAPHENE CAPPING LAYER AND FABRICATION METHOD THEREOF

摘要

The present invention relates to a copper interconnect device including a surface-modified graphene capping layer and a manufacturing method thereof, which can suppress an electromigration phenomenon of a fine copper interconnect with thinness of several nanometers or less. According to the present invention, the copper interconnect device has an effect of suppressing an electromigration phenomenon of the copper interconnect, since mobility of copper atom becomes difficult by chemical interaction with a function group even though only a capping layer with thinness of several nanometers or less is used, by using the surface-modified graphene, where function groups having chemical interaction with the copper atom are formed by modifying a surface of the graphene, as the capping layer. The copper interconnect device includes: a copper pattern layer; a liner/barrier layer formed at least on a part of a side and a lower plane of the copper pattern layer; an insulation film formed to be overlapped with at least a part of the outside of the liner/barrier layer; and the capping layer formed on an exposed surface of the copper pattern layer.