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Polymeric precursors for production of graphene nanoribbons, and methods of making

机译:用于生产石墨烯纳米带的聚合物前体及其制备方法

摘要

1. Oligofenilenovy monomer of general formula (I) in kotoroyRi independently from each other signify H, halogen, -OH, -NH, -CN, -NOili linear or branched, saturated or unsaturated CC-hydrocarbon residue which may be substituted with 1 -5 halogen (F, Cl, Br, I), -OR ,, -CN and / or -NO, and wherein one or more groups CHmogut be replaced by -O-, -S-, -NR-, -OC (O) - or -C (O) -, or an optionally substituted aryl, alkylaryl, or alkoxyaryl residue; each independently of one another represents H, CC-alkyl, CC-alkenyl, CC-alkynyl, CC-haloalkyl, CC-haloalkenyl, CC -galogenalkinil or CC-acyl; each independently of one another represents H, CC-alkyl, CC-alkenyl, CC-alkynyl, CC-haloalkyl, CC-haloalkenyl, CC-CC-haloalkynyl or acyl; and m is 0, 1, or 2.2. Oligofenilenovy monomer according to Claim. 1, wherein r and independently of one another are H, CC-alkyl, CC-alkoxy, CC-alkylthio, CC-alkenyl, CC-alkynyl, CC-haloalkyl, CC-haloalkenyl or galogenalkinil.3. Oligofenilenovy monomer according to Claim. 1, in which m is equal to 0.4. Oligofenilenovy monomer according to any one of claims. 1-3, wherein Roznachaet linear or branched CC-alkyl and Rs H.5. Application oligofenilenovogo monomer according to any one of claims. 1-4 to give a polymer precursor for forming the graphene nanolent.6. The polymeric precursor is intended to obtain graphene nanoribbons having repeating units of the general formula (II) in kotoroyRi independently from each other signify H, halogen, -OH, -NH, -CN, -NOili linear or branched, saturated or unsaturated hydrocarbon residue CC- which may be substituted by 1-5 halogens (F, Cl, Br, I), -OR ,, -CN and / or -NO, and wherein one or more groups CHmogut be replaced by -O-, -S -, -NR-, -OC (O) - or -C (O) -, or an optionally substituted aryl, alkoxyaryl or alkylaryl moiety;
机译:1.彼此独立地在kotoroyRi中的通式(I)的寡苯甲酸酯基单体表示H,卤素,-OH,-NH,-CN,-NOili直链或支链的,饱和或不饱和的CC-烃残基,它们可被1-取代5个卤素(F,Cl,Br,I),-OR 、、-CN和/或-NO,其中一个或多个CHmogut基团被-O-,-S-,-NR-,-OC(O )-或-C(O)-,或任选取代的芳基,烷基芳基或烷氧基芳基残基;彼此独立地表示H,CC-烷基,CC-烯基,CC-炔基,CC-卤代烷基,CC-卤代烯基,CC-galalalkinil或CC-酰基;彼此独立地表示H,CC-烷基,CC-烯基,CC-炔基,CC-卤代烷基,CC-卤代烯基,CC-CC-卤代炔基或酰基; m为0、1或2.2。根据权利要求1的低聚苯胺新单体。图1,其中r和彼此独立地是H,C 1-烷基,C 1-烷氧基,C 1-烷硫基,C 1-烯基,C 1-炔基,C 1-卤代烷基,C 1-卤代烯基或半乳基。根据权利要求1的低聚苯胺新单体。 1,其中m等于0.4。 7.根据权利要求1至7中任一项所述的低聚苯胺新单体。 1-3,其中Roznachaet为直链或支链的CC-烷基和Rs H.5。 11.根据权利要求1至13中任一项所述的应用寡聚苯酚新单体。 1-4,得到用于形成石墨烯纳米级的聚合物前体。6。聚合物前体旨在获得在kotoroyRi中具有彼此独立的通式(II)重复单元的石墨烯纳米带,表示H,卤素,-OH,-NH,-CN,-NOili直链或支链的饱和或不饱和烃残基CC-可以被1-5个卤素(F,Cl,Br,I),-OR 、、-CN和/或-NO取代,并且其中一个或多个基团CHmogut被-O-,-S-取代,-NR-,-OC(O)-或-C(O)-或任选取代的芳基,烷氧基芳基或烷基芳基部分;

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