Scintillation detectors With photodetectors on GaAs BASED

摘要

The utility model relates to the registration of ionizing radiation and can be used for the detection of charged particles of high space, as well as for detecting charged particles land-based sources. Scintillation detector operates over a wide dynamic range requires a high-voltage power supply and the magnetic shielding and has high radiation resistance. To register scintillator outbreaks of a semiconductor photodetector, the latter being characterized in that it is made on n ⁺ GaAs substrate to the reverse side of which is formed an ohmic contact, and on the working side of the substrate are successively formed an epitaxial layer of i-GaAs with a net carrier concentration of 10 ¹² cm ^3, an epitaxial layer of p-GaAs base thickness of 400-500 nm with a carrier concentration of 5 × 10 ¹⁷ cm ^-3 and an epitaxial layer of n ⁺ Al _x Ga _1-x As emitter window wideband (x varies from 0.8 to 1 ) thickness 1 00-120 nm at a concentration of charge carriers cm ^-3 October ^19, which formed an ohmic contact.