Based on anodic aluminium oxide, air gap image end techniques for connecting structures and methods for this purpose,

摘要

A semiconductor device, comprising:a first conductive layer (102), which is arranged above a semiconductor substrate;a second conductive layer (130), which, by means of the first conductive layer is arranged;an aluminum oxide - dielectric layer (112) which, between the first and second conductive layer (102, 130) is arranged in order to provide an electrical insulation between the first and second conductive layer (102, 130) to provide,a trench (110) in an upper section of the aluminum oxide - dielectric layer (112);the aluminum oxide - dielectric layer (112) an aluminum oxide matrix with a plurality of air gaps (122) comprises extending therethrough, wherein the air gaps (122) perpendicular to a surface of the semiconductor substrate extend when they extend through the aluminum oxide matrix; andthe aluminum oxide - dielectric layer (112) comprises further comprising a plurality of pores, which under the trench (110) are arranged, and wherein the air gaps (122) on each side of the trench (110) in the aluminum oxide - dielectric layer (112) are arranged, wherein the plurality of pores in each case of diameter, which in the average less than the respective diameter of the plurality of air gaps (122) are.