Thermo diodes element for a photosensor to the infrared -), photosensor and a method for producing a thermo diodes element

摘要

The present invention relates to a thermo diodes element for a photosensor for a thermocamera to the infrared radiation -. The thermo diodes element has, on a semiconductor substrate having a first layer and a to the first layer adjacent second layer, a bottom doping zone in the first layer, a sides doping zone in the second layer, wherein the bottom doping zone and pages doping zone have the same first doping type, and a further doping zone in the second layer as a island in the sides of doping zone, wherein the bottom doping zone on the further doping zone is located adjacent, wherein the further doping zone a to the first doping type opposite second doping has the type.