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JOINT BODY OF Cu-BASES BASE MATERIAL WITH Zn-Al BASES ALLOY JOINTED BY CLAD MATERIAL

机译:包覆材料连接的Zn-Al基合金与Cu基材料的结合体

摘要

PROBLEM TO BE SOLVED: To provide a joint body of a semiconductor element with a substrate jointed by a clad material having a high joint strength and excellent in stress relaxation property, and in thermal conductivity.;SOLUTION: A joint body, comprising a semiconductor chip 1 jointed with a substrate 3 by a clad material 2, keeps the face on the semiconductor chip 1 side narrower than the face on the clad material 2 side on both faces where the semiconductor chip 1 and the clad material 2 face each other, and the clad material 2 has a Pb-free-Zn-Al based alloy solder layer 22 on a face of a tabular Cu-based base material 21 to face at least the semiconductor chip 1. The Zn-Al based alloy solder layer 22 preferably contains Al by 0.9 mass% or more and 9.0 mass% or less, and more preferably contains one kind or more of Ag, Cu,Ge, Mg, Sn, and P in a predetermined amount.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT
机译:解决的问题:提供一种半导体元件与基板的接合体,该接合体通过具有高接合强度且应力松弛特性和导热性优异的包覆材料接合的基板;解决方案:一种接合体,包括半导体芯片如图1所示,通过覆层材料2与基板3接合的图1的半导体芯片1和覆层材料2相对的两面的半导体芯片1侧的面比覆层材料2侧的面窄。包层材料2在平板状的铜基基材21的至少与半导体芯片1相对的面上具有无铅的Zn-Al基合金焊料层22。Zn-Al基合金焊料层22优选含有Al。 0.9质量%以上至9.0质量%以下,更优选以预定量包含一种或多种Ag,Cu,Ge,Mg,Sn和P .;部分附图:图1;版权:(C )2017,JPO&INPIT

著录项

  • 公开/公告号JP2017124426A

    专利类型

  • 公开/公告日2017-07-20

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20160005232

  • 发明设计人 IZEKI TAKASHI;

    申请日2016-01-14

  • 分类号B23K35/22;B23K35/28;C22C18/04;H05K3/34;B23K1/00;B23K1/19;B23K101/42;

  • 国家 JP

  • 入库时间 2022-08-21 14:01:25

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