METHOD FOR MEASURING CARBON CONCENTRATION OF SILICON SAMPLE, METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT, SILICON SINGLE CRYSTAL INGOT, AND SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide novel means for measuring a quantity of carbon in a silicon sample with a sensitivity comparable to or surpassing that achieved by SIMS method without the need for electron beam irradiation processing.SOLUTION: A method for measuring a carbon concentration in a silicon sample comprises the steps of: introducing hydrogen atoms into the silicon sample targeted for measurement; evaluating the silicon sample targeted for measurement with the hydrogen atoms introduced thereinto by an evaluation method arranged to evaluate a trap level in a silicon band gap without performing an electron beam irradiation process; and determining the carbon concentration in the silicon sample targeted for measurement based on part of evaluation results obtained by the evaluation, i.e. an evaluation result for at least one trap level selected from a group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV. The carbon concentration thus determined is less than 1.0E+16 atoms/cm.SELECTED DRAWING: None