Post ion implantation photoresist stripping composition for advanced semiconductor applications

摘要

The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (3 wt % H2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.