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Simplified optical sensing circuit, optical sensing device including the optical sensing circuit, method for driving the optical sensing device, image acquisition device including the optical sensing device, and optical touch screen device

机译:简化的光学传感电路,包括该光学传感电路的光学传感装置,驱动该光学传感装置的方法,包括该光学传感装置的图像获取装置以及光学触摸屏装置

摘要

In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer (15) including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data. The oxide semiconductor material includes one or more of ZnO, InO, SnO, InZnO, ZnSnO, or InSnO, or a material formed by adding at least one of Hf, Zr, Ti, Ta, Ga, Nb, V, AI, and Sn to one of ZnO, InO, SnO, InZnO, ZnSnO, or InSnO.
机译:在简化的光感测电路中,包括该光感测电路的光感测装置,驱动该光感测装置的方法,以及包括该光感测装置的图像获取装置和光学触摸屏装置,该光感测电路包括氧化物半导体。对于每个像素,该晶体管包括包括氧化物半导体材料的沟道层(15)。氧化物半导体晶体管被配置为用作感测光的光感测器件和输出光感测数据的开关。氧化物半导体材料包括ZnO,InO,SnO,InZnO,ZnSnO或InSnO中的一种或多种,​​或通过添加Hf,Zr,Ti,Ta,Ga,Nb,V,Al和Sn中的至少一种形成的材料。到ZnO,InO,SnO,InZnO,ZnSnO或InSnO之一。

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