Vertical cavity surface emitting semiconductor laser, surface emitting semiconductor laser array, method of manufacturing the surface emitting semiconductor laser

摘要

PROBLEM TO BE SOLVED: To provide a surface-emitting type semiconductor laser which can operate at high speed.SOLUTION: A surface-emitting type semiconductor layer has a mesa M formed on a semi-insulating semiconductor substrate 100 and containing an n-type contact layer 40; an n-type lower part DBR 102; an active region 104; and a p-type upper part DBR 106. A groove 12 where the mesa is formed, is filled with an insulation material 70. An n-side electrode 50 is electrically connected to the contact layer 40 extending from a side surface of the mesa through a contact hole 74 formed in the insulation material. A p-side electrode 20 is electrically connected to the upper part DBR at an apex of the mesa. There is no contact layer below a metal wiring 52 connected to the n-side electrode and a metal wiring 22 connected to the p-side electrode.