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Silicon nitride powder, silicon nitride sintered body and circuit board, and method for producing silicon nitride powder

机译:氮化硅粉末,氮化硅烧结体和电路板以及制造氮化硅粉末的方法

摘要

An object of the present invention is to provide a silicon nitride sintered body and a circuit board having high thermal conductivity and also high mechanical strength, a silicon nitride powder as a raw material thereof, and a method for producing the same. The specific surface area is 4.0-9.0 m2 / g, the proportion of β phase is less than 40%, the oxygen content is 0.20-0.95% by mass, and the volume-based particle size by laser diffraction scattering method. The frequency distribution curve obtained by distribution measurement has two peaks, and the peak tops of the peaks are in the range of 0.4 to 0.7 μm and in the range of 1.5 to 3.0 μm. The ratio of the frequency (frequency of peak top in the range of particle diameter 0.4 to 0.7 μm / frequency of peak top in the range of particle diameter 1.5 to 3.0 μm) is 0.5 to 1.5, Silicon nitride in which the ratio D50 / DBET (μm / μm) between the median diameter D50 (μm) obtained by the particle size distribution measurement and the specific surface area equivalent diameter DBET (μm) calculated from the specific surface area is 3.5 or more Powder, nitride nitride obtained from this silicon nitride powder An iodine sintered body, a circuit board, and a method for producing the silicon nitride powder are provided.
机译:本发明的目的是提供具有高导热率并且还具有高机械强度的氮化硅烧结体和电路板,作为原料的氮化硅粉末及其制造方法。比表面积为4.0-9.0m2 / g,β相的比例小于40%,氧含量为0.20-0.95质量%,并且通过激光衍射散射法的基于体积的粒径。通过分布测量获得的频率分布曲线具有两个峰,并且峰的峰顶在0.4至0.7μm的范围内并且在1.5至3.0μm的范围内。频率之比(在0.4至0.7μm的粒径范围内的峰顶频率/在1.5至3.0μm的粒径范围内的峰顶频率)为0.5至1.5,其中氮化硅的比率为D50 / DBET通过粒度分布测定得到的中位直径D50(μm)与由比表面积算出的比表面积当量直径DBET(μm)之间的(μm/μm)为3.5以上。本发明提供一种碘烧结体,电路基板以及氮化硅粉末的制造方法。

著录项

  • 公开/公告号JPWO2015194552A1

    专利类型

  • 公开/公告日2017-04-27

    原文格式PDF

  • 申请/专利权人 宇部興産株式会社;

    申请/专利号JP20160529373

  • 发明设计人 山尾 猛;本田 道夫;治田 慎輔;

    申请日2015-06-16

  • 分类号C01B21/068;C04B35/587;H05K1/03;

  • 国家 JP

  • 入库时间 2022-08-21 13:54:09

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