Electric field concentration position observation apparatus and electric field concentration position observation method

摘要

The observation apparatus 10 / b A includes a laser light source 18, a scanning optical system 16 that irradiates the semiconductor device 32 with laser light output from the laser light source 18, and a bias that applies a reverse bias voltage that is a predetermined voltage between the electrodes of the semiconductor device 32. The power supply 22 includes a sensor 24 that detects electrical characteristics generated in the semiconductor device 32 due to the laser light, and a control system 28 that generates an electrical characteristics image of the semiconductor device 32 based on a detection signal from the sensor 24. The bias power supply 22 increases the magnitude of the predetermined voltage step by step until reaching a voltage at which an avalanche amplification action occurs in the semiconductor device 32. When the predetermined voltage increases, the scanning optical system 16 emits laser light, the sensor 24 detects electrical characteristics, and the control system 28 generates an electrical characteristics image. Thereby, an electric field concentration position observation apparatus and an observation method capable of accurately knowing the electric field concentration location are realized.