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DIODE WITH REDUCED RECOVERY TIME FOR APPLICATIONS SUBJECT TO THE CURRENT RECIRCULATION PHENOMENON AND/OR TO FAST VOLTAGE VARIATIONS
DIODE WITH REDUCED RECOVERY TIME FOR APPLICATIONS SUBJECT TO THE CURRENT RECIRCULATION PHENOMENON AND/OR TO FAST VOLTAGE VARIATIONS
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机译:适用于受当前循环现象和/或快速电压变化影响的应用的具有减少的恢复时间的二极管
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摘要
A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.
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