首页> 外国专利> PROCESS DESIGN KIT FOR EFFICIENT AND ACCURATE MISMATCH SIMULATION OF ANALOG CIRCUITS

PROCESS DESIGN KIT FOR EFFICIENT AND ACCURATE MISMATCH SIMULATION OF ANALOG CIRCUITS

机译:模拟电路的高效,精确匹配仿真的过程设计套件

摘要

Approaches for a process design kit (PDK) for designing or manufacturing an integrated circuit with a hierarchical parameterized cell (PCELL) are provided. The PDK includes at least one model parameter which indicates a layout technique of the hierarchical PCELL, at least one hierarchical PCELL parameter which indicates at least one of the layout technique of the hierarchical PCELL and a parasitic characteristic of the hierarchical PCELL, and at least one layout vs. schematic (LVS) parameter which indicates the layout technique of the hierarchical PCELL. The hierarchical PCELL includes a pair of matching transistors. The PDK is configured to simulate and output mismatch characteristics and local variation characteristics of the hierarchical PCELL based on the at least one model parameter, the at least one hierarchical PCELL, and the at least one LVS parameter.
机译:提供了用于设计或制造具有分层参数化单元(PCELL)的集成电路的过程设计套件(PDK)的方法。该PDK包括指示分层PCELL的布局技术的至少一个模型参数,指示分层PCELL的布局技术和分层PCELL的寄生特性中的至少一种的至少一个分层PCELL参数,以及至少一个。布局与逻辑示意图(LVS)参数,指示分层PCELL的布局技术。分级PCELL包括一对匹配晶体管。 PDK被配置为基于至少一个模型参数,至少一个分层PCELL和至少一个LVS参数来模拟并输出分层PCELL的失配特性和局部变化特性。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号