首页> 外国专利> MLU CELL FOR SENSING AN EXTERNAL MAGNETIC FIELD AND A MAGNETIC SENSOR DEVICE COMPRISING THE MLU CELL

MLU CELL FOR SENSING AN EXTERNAL MAGNETIC FIELD AND A MAGNETIC SENSOR DEVICE COMPRISING THE MLU CELL

机译:用于感测外部磁场的MLU单元以及包括该MLU单元的磁传感器装置

摘要

A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.
机译:一种用于感测外部磁场的MLU单元,其包括磁性隧道结,该磁性隧道结包括感测层,该感测层具有适于由外部磁场定向的感测磁化强度;具有参考磁化强度的参考层;隧道势垒层;偏置层具有偏置磁化强度和偏置反铁磁层,其在低阈值温度下基本上平行于被钉扎的参考磁化强度来固定偏置磁化强度,并在高阈值温度下将其释放。偏置耦合层位于感测层和基础层之间,并且配置成用于磁耦合偏置层和感测层,使得感测磁化取向成基本上垂直于钉扎偏置磁化和钉扎参考磁化。本公开进一步涉及一种用于感测外部磁场的磁传感器装置,包括多个MLU单元。

著录项

  • 公开/公告号US2017322263A1

    专利类型

  • 公开/公告日2017-11-09

    原文格式PDF

  • 申请/专利权人 CROCUS TECHNOLOGY SA;

    申请/专利号US201515527766

  • 发明设计人 SEBASTIEN BANDIERA;

    申请日2015-11-18

  • 分类号G01R33;G01R33/09;

  • 国家 US

  • 入库时间 2022-08-21 13:48:47

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