首页> 外国专利> APPARATUS AND METHOD FOR ELECTODEPOSITION OF METALS WITH THE USE OF AN IONICALLY RESISTIVE IONICALLY PERMEABLE ELEMENT HAVING SPATIALLY TAILORED RESISTIVITY

APPARATUS AND METHOD FOR ELECTODEPOSITION OF METALS WITH THE USE OF AN IONICALLY RESISTIVE IONICALLY PERMEABLE ELEMENT HAVING SPATIALLY TAILORED RESISTIVITY

机译:使用具有空间化电阻率的离子电阻离子渗透性元素进行金属电沉积的装置和方法

摘要

An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.
机译:一种用于在具有改善的镀敷均匀性的半导体基板上进行金属镀敷的装置,其特征在于,包括:形成有电解液和阳极的镀敷室。基板保持器,被构造为保持半导体基板;离子电阻离子渗透性元件,包括基本上平坦的面向衬底的表面和相对的表面,其中该元件允许在电镀期间离子电流流向衬底,并且其中该元件包括具有变化的局部电阻率的区域。在一示例中,通过改变元件的厚度来改变元件的电阻率。在一些实施例中,元件的厚度沿径向方向从元件的边缘到元件的中心逐渐减小。所提供的设备和方法对于在WLP凹陷特征中电镀金属特别有用。

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