首页>
外国专利>
BAW resonator having lateral energy confinement and methods of fabrication thereof
BAW resonator having lateral energy confinement and methods of fabrication thereof
展开▼
机译:具有横向能量限制的baw谐振器及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.
展开▼
机译:公开了一种体声波(BAW)谐振器的实施例,其中,以这样的方式设计了BAW谐振器的外部区域,使得减少了来自BAW谐振器的有源区域的机械能的侧向泄漏,并且公开了其制造方法。 。在一些实施例中,BAW谐振器包括压电层,在压电层的第一表面上的第一电极,在压电层的与第一电极相对的第二表面上的第二电极以及在第二电极的表面上的钝化层。与压电层相对的电极,钝化层具有厚度(T PA Sub>)。该BAW谐振器还包括在BAW谐振器的外部区域中与第二电极相邻的压电层的第二表面上的材料。附加材料的厚度是钝化层的厚度(T PA Sub>)的n倍。
展开▼