首页> 外国专利> Ramp-type analogue-digital conversion, with multiple conversions or single conversion, depending on the light level received by a pixel

Ramp-type analogue-digital conversion, with multiple conversions or single conversion, depending on the light level received by a pixel

机译:斜坡型模数转换,根据像素接收的光水平,可以进行多次转换或一次转换

摘要

In a matrix image sensor, a method of reading a pixel of a column allows two modes of analogue-digital conversion of the voltage level provided by the column: a first mode in which are carried out a single analogue-digital conversion in a nominal conversion time window FCONV, of nominal duration dn and a counting which starts with a ramp of nominal duration dn and stops upon the toggling of the output SCMP of the comparator; and a second mode which provides for multiple conversions by comparison with a ramp of reduced duration dr, in the same nominal conversion time window. The selection of the mode of conversion to be applied is based on the observation of the state of the output SCMP of the comparator after a predetermined duration after the instant ti of ramp start: if the output has toggled, the useful level to be converted represents a low light level to which the second mode with multiple conversions will be applied; if the output has not toggled, the useful level to be converted represents a high light level and the first, conventional, mode with single conversion will be applied. The invention makes it possible to improve the signal-to-noise ratio at the output of the sensor, for low light levels, by decreasing the amount of the Gaussian noise due to the circuits of the conversion chain.
机译:在矩阵图像传感器中,一种读取列像素的方法允许对列所提供的电压电平进行两种模式的模数转换:第一种模式是在标称转换中执行一次模数转换标称持续时间d n 的时间窗口F CONV 和以标称持续时间d n 的斜坡开始并在切换到比较器的输出S CMP ;第二种模式是在相同的标称转换时间窗口内,通过与持续时间d r 减小的斜坡进行比较来提供多次转换。选择要应用的转换模式是基于观察到比较器的输出S CMP 在时刻t i 之后的预定持续时间后的状态。斜坡开始:如果输出已切换,则要转换的有用电平表示将应用具有多次转换的第二种模式的弱光级别;如果输出未切换,则要转换的有用电平表示高亮度,并且将应用具有单个转换的第一个常规模式。通过减少由于转换链的电路引起的高斯噪声的量,本发明使得对于低光水平可以改善传感器的输出处的信噪比。

著录项

  • 公开/公告号US9736414B2

    专利类型

  • 公开/公告日2017-08-15

    原文格式PDF

  • 申请/专利权人 E2V SEMICONDUCTORS;

    申请/专利号US201415028446

  • 发明设计人 STÉPHANE GESSET;

    申请日2014-10-09

  • 分类号H04N5/378;H04N5/363;H04N5/357;H03M1/56;H04N5/355;H04N5/3745;H03M1/14;

  • 国家 US

  • 入库时间 2022-08-21 13:46:15

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