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Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response
Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response
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机译:基于故障计数电压响应的用于识别故障分析的外部SRAM位的方法
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摘要
A method and an apparatus for identifying non-intrinsic defect bits from a population of failing bits for failure analysis to characterize the extrinsic failure mechanisms is provided. Embodiments include performing a failure mode test on a bank of a memory array at different low VDD; determining optimal bank size to observe plateaus of fail counts; determining fail counts of the bank at each different low VDD; determining a plateau of the fail counts; determining whether the plateau represents extrinsic bits of the bank; and submitting the extrinsic bits for root cause analysis.
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