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Two-terminal memory compatibility with NAND flash memory set features type mechanisms

机译:两端存储器与NAND闪存集功能类型机制的兼容性

摘要

Operating characteristics associated with NAND flash memory can be modified and/or emulated to support corresponding operating characteristics for two-terminal memory. As a result, NAND flash memory modules included in conventional NAND flash memory devices (e.g., memory cards, solid-state drives, etc.) can be replaced with two-terminal memory without substantial changes to manufacturing infrastructure associated with the manufacture of these NAND flash memory devices.
机译:可以修改和/或仿真与NAND闪存相关的操作特性,以支持两端存储器的相应操作特性。结果,包括在常规NAND闪存设备(例如,存储卡,固态驱动器等)中的NAND闪存模块可以用两端子存储器代替,而无需对与这些NAND的制造相关的制造基础设施进行实质性改变。闪存设备。

著录项

  • 公开/公告号US9727258B1

    专利类型

  • 公开/公告日2017-08-08

    原文格式PDF

  • 申请/专利权人 CROSSBAR INC.;

    申请/专利号US201514642205

  • 发明设计人 HAGOP NAZARIAN;KUK-HWAN KIM;

    申请日2015-03-09

  • 分类号G06F3/06;

  • 国家 US

  • 入库时间 2022-08-21 13:42:33

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