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Photoelectrochemical cell including Ga(Sb_x)N_1-xsemiconductor electrode

机译：包含Ga（Sb _{x ）N _{1-x 半导体电极的光电化学电池}}

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The composition of matter comprising Ga(Sb_x)N_1−xwhere x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

机译：包含Ga（Sb _{x ）N _{1-x 的物质组成，其特征在于，带隙在2.4和1.7 eV之间。半导体器件包括具有该组成的半导体层。光电电池包括该半导体器件。}}

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公开/公告号US9755023B2

专利类型
公开/公告日2017-09-05

原文格式PDF
申请/专利权人 THE UNIVERSITY OF KENTUCKY RESEARCH FOUNDATION;THE UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION INC.;
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申请/专利号US201213630875
发明设计人 MADHU MENON;MICHAEL SHEETZ;MAHENDRA KUMAR SUNKARA;CHANDRASHEKHAR PENDYALA;SWATHI SUNKARA;JACEK B. JASINSKI;
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申请日2012-09-28
分类号C25B1/04;H01L29/20;H01L21/02;C25B1;
国家 US
入库时间 2022-08-21 13:42:33

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Photoelectrochemical cell including Ga(Sbx)N1-x semiconductor electrode

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Photoelectrochemical cell including Ga(Sb_x)N_1-xsemiconductor electrode