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Modeling localized temperature changes on an integrated circuit chip using thermal potential theory

机译:使用热势理论对集成电路芯片上的局部温度变化进行建模

摘要

A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.
机译:考虑到自芯片背面的低效散热,对由于自身加热以及与其他设备的热耦合而导致的集成电路芯片上的设备温度变化进行了建模。为了进行这样的建模,必须使用测试集成电路(IC)芯片来预定IC芯片上不同位置的虚热量与实际热量的比率。在测试期间,选择在测试IC芯片上一个特定位置的一个测试设备充当热源,而在测试IC芯片上其他位置的至少两个其他测试设备充当温度传感器。使热源偏置,并确定热源和传感器处的温度变化。这些变化用于计算与特定位置相关联的虚热量与实际热量之比的值。

著录项

  • 公开/公告号US9582621B2

    专利类型

  • 公开/公告日2017-02-28

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号US201514748595

  • 发明设计人 FREDERICK G. ANDERSON;NICHOLAS T. SCHMIDT;

    申请日2015-06-24

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 13:42:22

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