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Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure
Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure
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机译:具有场截止结构的IGBT的背面上的多晶硅保护层的去除方法
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摘要
Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.
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